Method of selectively etching a metal oxide on a material including Tantalum.

摘要

A method of manufacturing a semiconductor device, which comprises steps of providing a substrate (10), forming an oxide layer of a metal material, which includes tantalum, a tantalum compound or an alloy mainly containing tantalum on the substrate, placing the substrate into a first chamber (14), activating an etching gas which includes a fluorine containing gas and an oxygen containing gas, in a second chamber, introducing the activated etching gas into the first chamber (14), and etching the oxide layer by the introduced gas selectively against the substrate. A method of manufacturing a liquid crystal display device, comprises steps of providing a substrate (10), forming an anodic oxide layer of a tantalum containing material on the substrate, forming an etching mask on the anodic oxide layer, placing the substrate into a first region (14), activating a mixture of fluorine and oxygen containing gas in a second region, apart from the first region, introducing the activated etching gas into the first region (14) through a gas introducing portion (16), and etching the oxide layer on the substrate (10) selectively against the substrate, by using the etching mask.