PROCESS FOR PRODUCING WELLS FOR CMOS-TRANSISTOR CIRCUITS SEPARATED BY ISOLATION TRENCHES,申请号EP19880110886-传众专利搜索

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发明名称	PROCESS FOR PRODUCING WELLS FOR CMOS-TRANSISTOR CIRCUITS SEPARATED BY ISOLATION TRENCHES
摘要
申请公布号	EP0303050(B1)	申请公布日期	1993.06.23
申请号	EP19880110886	申请日期	1988.07.07
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	MAZURE-ESPEJO, CARLOS-ALBERT, DR.;NEPPL, FRANZ, DR.;ZELLER, CHRISTOPH, DR.
分类号	H01L21/76;H01L21/033;H01L21/308;H01L21/762;H01L21/8238;H01L27/08;H01L27/092	主分类号	H01L21/76
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