| 摘要 |
<p>A semiconductor-on-insulator structure is fabricated from an initial structure in which a primary wafer-like semiconductive body (20) having a largely flat upper surface (26) and a typical thickness of 2 microns or more adjoins an insulating layer (24) of an underlying supporting substructure (22, 24, and 28). The fabrication involves performing a vapor-phase etch, preferably with gaseous hydrochloric acid, on the primary body to lower the upper surface while keeping it largely flat. The thickness of the primary body is thereby reduced to a value typically less than 2 microns -- e.g., 1 micron. <IMAGE></p> |
