| 摘要 |
A static random access memory (SRAM) cell uses a pair of conventional cross-coupled MOSFET devices including an inversion layer, and a pair of inversion-free Fermi threshold FET devices, of the same conductivity type as the cross-coupled transistor pair, for resistive loads. The Fermi-FETs provide a high valued resistor, the value of which is independent of current variations and which is easily fabricated without the need to control polycrystalline silicon grain size. The Fermi-FETs may also provide temperature compensation of the SRAM cell so that it is operable over a wide range of temperature. Fermi-FETs may also be used for the pass transistors of the SRAM cell with the Fermi-FET's low gate capacitance minimizing the loading of the word line. A high speed, dense SRAM cell is provided. The Fermi-FET may also be used in other applications which require low input capacitance, high value constant resistance and temperature compensation.
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