| 摘要 |
The method comprises (a) forming initial oxide layer (2) on the silicon substrate, (b) photoetching the oxide layer (2) to form buried oxide layer (2a), (c) growing a single crystal layer to form epitaxial layer (3) and crystal defect (5), (d) forming oxide layer (2) thereon, (e) photoetching a part of the oxide layer (2) on which isolation layer (4) is to be formed, and (f) implanting and selectively diffusing impurities through the defect to form isolation layer (4). The method can improve the degree of integration of IC and reduce the diffusion depth of isolation layer and the processing time at high temperature.
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