发明名称 |
PRODUCTION OF CARBON MATERIAL |
摘要 |
PURPOSE:To easily form a film to a larger area at a lower temp. by forming the film of prescribed raw materials under atm. pressure by a chemical vdpor growth(CVD) method. CONSTITUTION:The starting raw materials for reaction consisting of 1wt.% hydrocarbon halide having a dipole moment of gaseous or liquid state at ordinary temp. and hydrogen or the hydrocarbon halide and hydrogen as well as dilute gas as a diluting gas are introduced into a quartz reaction tube 1 from a gas introducing port 2 of the device, such as reaction tube. A filament 3 is thereafter energized to heat a substrate 4 to 400 to 1300 deg.C. The reactive gases are then thermally decomposed by contact heating and the objective carbon material contg. hexagonal diamond having a granular or thin-film shape is produced on the substrate 4. |
申请公布号 |
JPH05155689(A) |
申请公布日期 |
1993.06.22 |
申请号 |
JP19910348218 |
申请日期 |
1991.12.04 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
INOUE TORU;OTANI HISASHI;MIYANAGA SHOJI |
分类号 |
C01B31/06;C23C16/26;C23C16/27;C30B29/04 |
主分类号 |
C01B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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