| 摘要 |
PURPOSE:To easily obtain a large-area thin film by heating prescribed raw materials under a reaction region to change the raw materials to active species, then transporting the active species to a heated film forming region and forming the film on a substrate. CONSTITUTION:The raw materials consisting of hydrocarbon halide, hydrogen, diluting gas, etc., are introduced from a gas introducing port 2 into a quartz reaction tube 1. The inside of the reaction tube 1 is then set at about 760Torr and is heated by a filament 3 to 800 to 900 deg.C to form the reaction region. The gases are passed in the region for the required time from 1 to 10sec to form the active species. After the active species are transferred to a film forming region kept at 100 to 400 deg.C, the film is formed on the substrate 4 consisting of single crystal silicon by a chemical vapor growth method, by which the objective carbon material incorporating diamond having a granular or thin-film shape is produced. |
