| 摘要 |
PURPOSE:To improve crystallinity and the uniformity of film thicknesses by subjecting a substrate to an immersion treatment in the melt in a crucible while maintaining the temp. in the upper part of the melt higher than the temp. in the lower part and providing a prescribed temp. gradient. CONSTITUTION:A mixture composed of a flux Li0.7Na0.3VO3 and LiNbO3 is put into the platinum crucible 5 of a liquid phase epitaxy-(LPE) device and is melted by heating. The temp. of the melt is controlled by heaters 1-1, 1-2, 1-3 in the upper part, central part and lower part, by which the melt 9 having 0.5 to 2.0 deg.C/cm temp. gradient is obtd. The single crystal substrate 8 consisting of lithium tantalate is then immersed into the melt 9 and the melt is stirred under heating to grow the lithium niobate by LPE at about 1mum/min growth speed on the substrate 8. The substrate 8 is then pulled up and is slowly cooled, by which the objective single crystal thin film of the lithium niobate is grown on the substrate 8. |
