| 摘要 |
The semiconductor device is mfd. by (a) depositing a first oxide film (2) and a first nitride film (3) on the silicon substrate (1), and then lifting off the film (3) of the active region, (b) thermally oxidizing the active region to form a thermal oxide film, (c) lifting off the films (2)(3) and the thermal oxide film to form a lower topology of the active region than that of the field region, (d) depositing a second oxide film (2a) and a second nitride film (3a) on the substrate (1), and then lifting off the film (3a) of the field region, and (e) implanting an ion to form a field oxide film (5).
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