| 摘要 |
<p>PURPOSE:To let a large amount of current flow by making a gate wiring body of an aluminum or aluminum alloy, and making an interlayer insulating film between the gate wiring body and a semiconductor layer of a high melting point metallic oxide. CONSTITUTION:Aluminum 32 is grown on a transparent substrate 31, and successively metal 33, by which an oxide becomes dense when an anode is oxidated; and the oxide being large in electric permeability can be gotten. And they are placed on the aluminum film 32. Next, the metal 33 becomes an metallic oxide film 35 by performing anode oxidation, and dense insulating film can be gotten. Hereby, the channel conductance when having turning on a film transistor can be made large, and a large amount of current can be made to flow.</p> |
