发明名称 METHOD FOR FORMING X-RAY MASK
摘要 PURPOSE:To provide a structure for an X-ray mask with good characteristics, by controlling the line width both in a resist pattern and a plating pattern accurately. CONSTITUTION:An X-ray mask structure containing an X-ray absorbent with a given pattern is formed on an X-ray transmitting film. A plated stencil is used to form the X-ray absorbent pattern. The plated stencil made of an organic resist is located vertically or at a reverse tapered angle to a substrate. The organic resist pattern is treated in both a plating step and a graft polymer step repeatedly to form an X-ray absorbent pattern with a forward tapered angle.
申请公布号 JPH05152194(A) 申请公布日期 1993.06.18
申请号 JP19910307142 申请日期 1991.10.28
申请人 CANON INC 发明人 MAEHARA HIROSHI
分类号 G03F1/22;G11B11/00;H01L21/027 主分类号 G03F1/22
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