| 摘要 |
PURPOSE: To enable the local interconnection between the selected regions of first and second conductive structures without performing an additional treatment, by a method wherein the selected regions of the first and the second conductive structures are made to expose, a refractory metal layer is formed on an integrated circuit and a barrier layer is formed on the refractory metal layer. CONSTITUTION: An insulating film 28 on an integrated circuit formed with first and second conductive structures 13 and 17 is etched and selected regions of the structures 13 and 17 are made to expose. A refractory metal layer 30 is formed on the integrated circuit and a barrier layer 32 is formed on this layer 30. Moreover, a refractory metal silicide layer 34 is formed on the layer 32 according to the need. The layer 30 and the layer 32 are etched, or in the case where the layer 34 is formed, the layer 34 is etched to demarcate a conductive interconnected body between the exposed selected regions of the structures 13 and 17. At this time, a good contact resistance is given to both of source/ drain regions 24 and the conductive structures by the layer 30. |
