| 摘要 |
PURPOSE: To provide a method capable of modifying the use of a metal silicide film for forming a contact with a silicon film and the use of a conductive material film for filling an opening for contact into a reliable single process, in such a way as to prevent the silicide film coming into contact with the silicon film from being damaged. CONSTITUTION: A method of forming a conductive region comprises a process, wherein a first layer 20 which is electrically connected with a silicon semiconductor substrate 10 and consists of a silicide as a first conductive material, and a second layer 22 which is provided on the layer 20 in such a way as to connect electrically with the layer 20, are formed. The layer 22 consists of a second conductive material different from the first conductive material. In the formation of the layer 22, a material having a possibility to deteriorate chemically the electrical connection between the layers 20 and 22 is not contained. A third layer 32, which is electrically connected with the layer 22, is formed on the layer 22. |
