| 摘要 |
PURPOSE:To lessen the forward voltage drop of a Schottky barrier diode without incurring the sharp drop of a leak current or the sharp drop of reverse breakdown strength. CONSTITUTION:The resistivity of the epitaxial layer 3 constituting a Schottky barrier diode(SBD) is 0.25OMEGA.cm-0.75OMEGA.cm, and the thickness is 3.5mum-4.5mum, and besides the height of the barrier of the Schottky barrier layer made on the epitaxial layer 3 is made 0.58eV-0.62eV by the conductor layer 6a of the Schottky electrode 6 provided on the epitaxial layer 3. |
