MANUFACTURE OF HIGH-SPEED LOW-LEAKAGE CMOS/SOI DEVICE CURED BY RADIATION

摘要

PURPOSE: To manufacture a radiation-hardened high-speed low-leakage semiconductor device, which is actuated stably even in the environment with radioactive rays. CONSTITUTION: A substrate 10 of SIMOX (separation due to an oxygen ion- implantation) with silicon islands 18 and 20 is used, whereby the groups of N-channel and P-channel devices which are separated from each other are respectively formed on the respective silicon islands, a thin silicon oxide layer 14 is applied thereon and, moreover, phosphoborosilicate glass films 34a are deposited, the films 34 are reflowed, contact places 56 are formed by etching, and the final wiring is provided.