| 摘要 |
PURPOSE: To increase the capacity of the capacitor of a semiconductor storage device and also to facilitate a method of manufacturing the capacitor, by a method wherein a first laminated capacitor is formed under the lower part of a second charge conservation electrode, and a second laminated capacitor is formed on the upper part of the second charge conservation electrode. CONSTITUTION: A first insulating film 5 is formed on a semiconductor substrate 1 and, thereafter, the film 5 is made to put into a constant part of the upper part of a source electrode 4, and a first contact groove and a first charge conservation electrode 6 are formed. A first capacitor dielectric film 7 is formed on the upper part of the electrode 6, and a first plate electrode 8 is formed on the upper part of the film 7 to form a first laminated capacitor. A second charge conservation electrode is formed on the electrode 6 via a third contact groove. A second capacitor dielectric film 14 is formed on the second charge conservation electrode, and a second plate electrode is formed on the upper part of the film 14 to form a second laminated capacitor. As a result, the capacity of the capacitor of a semiconductor storage device is increased and, at the same time, the step of the contact of the second charge conservation electrode is adjusted and the generation of a contact failure can be prevented. |
