| 摘要 |
PURPOSE:To improve the visibility and brightness of a light emitting diode having a light emitting element made of a gallium nitride based compound semiconductor material having its light emitting peaks near 430nm and 370nm. CONSTITUTION:In a light emitting diode comprising a light emitting elect 11 on a stem and a resin mold 4 surrounding it, the light emitting element 11 is made of a gallium nitride based compound semiconductor specified by a general chemical formula GaxAl1-xN (where 0<=x<=1), and further, a fluorescent dye 5 or a fluorescent pigment, which emits a fluorescent light excited by the light emission of the gallium nitride based compound semiconductor, is added additionally in the resin mold 4. |
