| 摘要 |
PURPOSE:To prevent a stress due to a difference between thermal expansion coefficients from being generated at the bent parts of a non-flat active layer in regard to a semiconductor light-emitting device of a constitution, wherein the active layer has a non-flat structure and the material for a heat sink has characteristics. CONSTITUTION:A semiconductor light-emitting device, which has a semiconductor substrate 18, an active layer 15 formed on this substrate 18 and a heat sink 11 for dissipating heat which is generated in the layer 15, has a constitution, wherein this layer 15 has a non-flat structure and this sink 11 is constituted of the same material as the material for the substrate 18 and is secured on the surface on the opposite side to the surface of the substrate 18. In this case, the active layer can possess a double heterostructure. |
