发明名称 Werkwijze voor fotolithografie bij het vervaardigen van een halfgeleider.
摘要 The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive layer over a substrate, developing the photo sensitive layer to expose a portion of the substrate and to create a seed layer from at least a portion of the photo sensitive layer remaining after the developing, forming an etch stop layer only on the seed layer, and etching the substrate using the etch stop layer as a mask.
申请公布号 NL1031939(A1) 申请公布日期 2007.05.02
申请号 NL20061031939 申请日期 2006.06.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHIN-HSIANG LIN
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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