Distributed phase shift semiconductor laser.

摘要

A laser (10) using a distributed phase shift structure is disclosed. The active medium (12) is formed in the shape of a stripe having first and second surfaces and two ends. The stripe includes a large central portion and two end portions with the central portion being of different widths than the two end portions. A laser device which utilizes the active medium of the present invention further includes at least one P-guide layer (32) and at least one N-guide layer (30), both having a higher bandgap energy than the active medium. The P-guide layer and the N-guide layer are located on opposing surfaces of the active medium. A current which is injected through the N-guide layer, the P-guide layer and the active medium induces single mode, narrow linewidth coherent light to issue from the active medium. <IMAGE>