| 摘要 |
The tungsten thin film is mfd. by (a) covering an oxide film (2) on the silicon device (1), (b) covering a polysilicon film (5) on the front and rear surface of the wafer, (c) forming a contact window (6) and an adhesion-improving layer (3), (d) covering a tungsten thin film (4) on the whole surface of the wafer, (e) dry-etching the thin film (4) to leave the only inner thin film of the contact window (6), and (f) removing the polysilicon film (5) with the mixed soln. of HNO3, CH3COOH and HF. The thin film is used in the mfr. of VLSI and ULSI devices.
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