发明名称 SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETS
摘要 a substrate comprising at least one gate region located thereon, said at least one gate region comprising a layer of at least one one-dimensional nanostructure; and a metal carbide contact located on a surface of said substrate that is aligned to an edge of said layer of at least one one-dimensional nanostructure.
申请公布号 KR20070093085(A) 申请公布日期 2007.09.17
申请号 KR20077015390 申请日期 2005.12.13
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AVOURIS PHAEDON;CARRUTHERS ROY;CHEN JIA;DETAVERNIER CHRISTOPHE;LAVOIE CHRISTIAN;WONG HON SUM PHILIP
分类号 H01L51/00 主分类号 H01L51/00
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