| 摘要 |
The device-isolating film of the semiconductor device is mfd. by (a) forming a silicon oxide film (20) and a silicon nitride film (30) on the silicon substrate (1), and then selectively etching an isolating region of the film (30), (b) implanting an impurity for a channel stop, (c) depositing a polycrystalline silicon (60) on the films (20,30), (d) depositing an oxide film (21) and then coating a photoresistor (51) on the side wall (60A) of the film (30) , (e) etching the film (21), and then selectively etching the film (30), and (f) heat-oxidizing the side wall (60A) to form an insulating oxide film (21B).
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