| 摘要 |
In power transistor modules, an internal wiring structure for a semiconductor device is provided in which internal leads that are subject to oscillations and maloperation are eliminated, and in which the material yield is improved and the assembly process is simplified. A series of internal wiring is formed on the lead frame (14) of the main circuit, and the lead frame of the auxiliary circuit (15), which is formed between the conductor patterns (3) in a circuit substrate mounting semiconductor chips (4) and (5) of the main circuit and an auxiliary circuit, and the terminal block (7) consisting of a series of main external lead-through terminals (9) and auxiliary external lead-through terminals (10) inserted into a case lid (8). A wiring block (12) consisting of lead frames integrally moulded with a retaining frame (16) made of resin is disposed thereto, and the terminal connections on the circuit substrate are soldered with external lead-through terminals (9, 10) on the terminal block (7) via the wiring block (12). <IMAGE> |
