| 摘要 |
To generate a largely temperature-independent reference voltage (VR) in MOS technology without additional process steps, a band gap circuit is provided in which the bipolar transistors are constructed as parasitic transistors (T1 to T3, T5 to T7, T10 to T12) and a required operational amplifier (OP) is constructed in complementary MOS technology. The reference voltage (VR) can be multiplied by cascading the bipolar transistors (T1 to T3; T5, T6, T10, T11) and base currents can be compensated by using compensation transistors (T7, T12). The operational amplifier (OP) with p-channel input transistors (M1, M2) and a source-follower output transistor (M5) controls a current generator (M20, M21), the current of which (IR) is balanced in the bipolar transistors (T5 to T7, T10 to T12). The collector currents of the bipolar transistors (T1 to T3; T5 to T7, T10 to T12) flowing into the substrate (VSUB) can be managed by conventional means. …<IMAGE>… |
