发明名称 Radiation tolerant complementary MOS logic for bipolar/CMOS integrated circuitry
摘要 A novel double diffused complementary MOS (DCMOS) logic family is disclosed which allows greater tolerance to total dose gamma radiation. The logic family may be fabricated in conventional power BiCMOS IC technology in which complementary power DMOS output devices and Bi-polar transistors are integrated with high performance complementary MOS devices to perform both digital and analog functions. The incorporation is achieved without the additional masks or process modifications normally required for improving radiation tolerance.
申请公布号 US5220218(A) 申请公布日期 1993.06.15
申请号 US19910763569 申请日期 1991.09.23
申请人 GENERAL ELECTRIC COMPANY 发明人 HILL, KEVIN E.;STEFURA, GARY A.
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
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