发明名称 |
Process for producing a superconducting transistor |
摘要 |
The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.
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申请公布号 |
US5219834(A) |
申请公布日期 |
1993.06.15 |
申请号 |
US19900527075 |
申请日期 |
1990.05.21 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
USUKI, TATSURO;SUZUKI, HIROSHI;YASUI, ICHIRO;YOSHISATO, YORINOBU |
分类号 |
H01L39/22;H01L39/24 |
主分类号 |
H01L39/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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