| 摘要 |
A semiconductor device having a field insulating film which comprises a semiconductor substrate having an active region and a field region, a first oxide film formed on a surface of the substrate within the field region and etched on an upper surface of the first oxide film, an amorphous silicon layer formed on the surface of the first oxide film by ion implantation, and a second oxide film formed on the amorphous silicon layer whereby a field insulating film has a three-layered structure consisting of the first oxide film, the amorphous silicon layer and the second oxide film. A method for manufacturing the semiconductor device is also described.
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