Variable-capacitance diode device with common electrode

摘要

A plurality of variable-capacitance diode elements are formed in the top of a semiconductor substrate. The rear surface of the substrate is connected to a first lead frame that acts as a common electrode for one electrode from each of the variable-capacitance diode elements. Each of the other electrodes of the variable-capacitance diode elements is connected by a wire to a second lead frame. In this manner, a single variable-capacitance diode device is formed between the first and second lead frames by a plurality of variable-capacitance diode elements.