| 发明名称 |
Trenching techniques for forming channels, vias and components in substrates |
| 摘要 |
Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.
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| 申请公布号 |
US5219787(A) |
申请公布日期 |
1993.06.15 |
| 申请号 |
US19920840428 |
申请日期 |
1992.02.24 |
| 申请人 |
MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION |
发明人 |
CAREY, DAVID H.;PIETILA, DOUGLASS A.;SIGMOND, DAVID M. |
| 分类号 |
H01L21/311;H01L21/48;H01L21/768;H01L23/485;H05K3/00;H05K3/10;H05K3/38;H05K3/40;H05K3/42;H05K3/46 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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