| 摘要 |
PURPOSE:To improve the production yield of the photomask for phase shift. CONSTITUTION:An etching resistant protective film 4 constituted of alumina, etc., is provided between light shielding patterns 3a to 3e and phase shifters 5a, 5b on a glass substrate 2 to prevent the glass substrate 2 from being etched at the time of forming the phase shifters 5a, 5b by etching an SOG(spin-on-glass) film which is a phase shifter material or removing the phase shifters 5a, 5b having defects by etching. |
