DRAM CELL HAVING A STACKED-TRENCHED CAPACITOR AND METHOD OF FABRICATING THEREFOR,申请号KR19900004603-传众专利搜索

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发明名称	DRAM CELL HAVING A STACKED-TRENCHED CAPACITOR AND METHOD OF FABRICATING THEREFOR
摘要
申请公布号	KR930004983(B1)	申请公布日期	1993.06.11
申请号	KR19900004603	申请日期	1990.04.03
申请人	KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE	发明人	KIM, CHON - SU;LEE, JIN - HO;LEE, KYU - HONG;KIM, DAE - YONG
分类号	H01L27/108;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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