| 摘要 |
<p>PURPOSE:To provide the auxiliary pattern type photomask for phase shift exposure which is easily manufactured. CONSTITUTION:A hole pattern 3 and an auxiliary pattern 4 at its periphery are almost of the same size. A transparent layer 5 give light beams, passed through the hole pattern 3 and auxiliary pattern 4, a 230 deg. phase difference. This photomask is used to expose a semiconductor substrate, which is coated with photoresist, to reduced projection light. The hole pattern 3 and auxiliary pattern 4 are almost of the same size, so the photoresist is transferred to normally up to the auxiliary pattern 4 at a focus position, but only the hole pattern 3 is emphasized and resolved by putting the semiconductor substrate away from the photomask.</p> |
