| 摘要 |
The component has an active layer (2) comprising at least one GaAs or GaAs alloy layer, and has two ohmic source (4) and drain (5) contacts and a Schottky gate contact (6). The gate contact receives a voltage which is successively, and indifferently, below -1 V and above +1 V. Between the active layer and the Schottky contact, the component has a thin undoped AlxGa1-xAs layer (11) having a given aluminium thickness and molar fraction xAl, dependent particularly on the desired nominal positive gate voltage and the maximum permissible gate leakage tunnel current, thereby allowing operation of the component in electron depletion mode for gate voltages below -1 V, and in electron accumulation mode for gate voltages above +1 V.
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