| 摘要 |
PURPOSE:To prevent the generation of cracks on the passivation film located in the vicinity of a protruding electrode, and to enhance reliability by a method wherein a wiring film and a metal film are formed successively, a patterning is conducted, the wiring film is patterned, a passivation film is formed, and a protruding electrode is formed on an aperture part. CONSTITUTION:A silicon oxide film 29, which is an insulating film, is formed on the semiconductor substrate 11 whereon the prescribed passive element and active element are formed. Subsequently, an aluminum film 25, a high melting point metal film 27 and a metal film 15 are formed on the silicon oxide film 29. After the metal layer 15 has been patternized, a protective film 17 is formed, and then the high melting point metal film 27 and the aluminum film 25 are patternized. Then, the protective film 17 in the aperture part on the passivation film 19 is removed, and a protruding electrode 23 is formed. As a result, no crack is generated on the passivation film, and a highly reliable semiconductor integrated circuit device can be obtained. |
