| 摘要 |
<p>PURPOSE:To prevent the degradation in the accuracy of the position of an electron beam even if the overlap exposure of the electron beam is executed by having a light shielding part, main patterns to allow the transmission of light to be a reference and phase shifter parts. CONSTITUTION:A metallic light shielding film 2 is formed on a transparent substrate 3 and after the main patterns 10 or phase shifter parts 9 are formed, a conductive layer 7 is formed over the entire surface of the transparent substrate 3 again. An EB resist layer 5 for EB exposure is applied thereon and is subjected to EB exposure. The conductive layer 7 is formed over the entire surface even if the EB resist layer 5 is irradiated with the electron beam 8 through this layer and, therefore, charges flow out to the outside without generating a charge-up. The degradation in the accuracy of the position is, therefore, obviated even if the overlap EB exposure is executed. The exposed EB resist layer 5 is then developed to expose the regions corresponding to the main patterns 10 and thereafter, the EB resist layer 5 is removed and the conductive layer 7 is removed. The phase shift reticule is thus produced with high accuracy.</p> |
