| 摘要 |
PURPOSE:To easily remove polycrystal growing on the upper portion of a resonator by using hydrochloric acid at room temperature, a solution mixed with hydrogen peroxide or an aqueous solution of sodium hydroxide of a particular temperature in a process of masking SiO2 over a resonator and removing a semiconductor portion of II-VI group compounds formed on the resonator. CONSTITUTION:The portion lowered by etching is buried to the same height as that of a p-type Al0.1 Ga0.9As contact layer 108 by forming a ZnSe layer 109 around the light emitting portion of a columner shape. During this burying a polycrystal ZnSe grows because SiO2 112 has been formed on the potion 108. This polycrystal ZnSe is immersed in an etching solution comprising HCl: H2O2:H2O at room temperature, and only the polycrystal is selectively etched. For the etching of polycrystal ZnSe, a mixed solution of hydrochloric acid and hydrogen peroxide is used, but the same effect can be obtained even though an aqueous solution of sodium hydroxide of 100 to 120 deg.C can be obtained. By doing this, the production process can be simplified and yield can be obtained. |
