| 摘要 |
PURPOSE:To increase the level of integration of a planar structure, and improve operation speed. CONSTITUTION:A source 4 of large area is formed on a P-type silicon substrate. A plurality of belt-shaped word lines 10, 12 are formed parallel with each other on the source 4. Gate oxide films 14 are formed on both side walls of the word lines. Epitaxial layers 16 are formed between the word lines. On the oxide films 12 on the word lines and on the epitaxial layers 16, a plurality of bit lines are formed in a parallel belt shape in the direction perpendicular to the word lines. Under a polycrystalline silicon film 18 of the bit lines, drains are formed in the epitaxial layers 16. In the epitaxial layers 16 adjacent to the gate oxide films 14, channels are formed between a drain 22 and the source 4, and a current in the longitudinal direction flows when the storage element is turned ON. |
