| 摘要 |
PURPOSE:To improve the open-circuit voltage of a compound semiconductor thin film optoelectric transducer using a CuInSe2 layer without reducing a short- circuit current density. CONSTITUTION:If a p-type CuInS2 layer 4 having a large band gap is inserted between a p-type CuInSe2 layer 3 and an n-type CdS layer 5 or an n-type CdZnS layer 5, an open-circuit voltage of a compound semiconductor thin film optoelectric transducer using the layer 3 is improved by the large band gap of the p-type layer to form a junction interface. A short-circuit current is prevented from being reduced by turning the layer 3 located at the back of the layer 4 into a photoabsorption layer. A roughened surface, which is generated when the layer 4 is formed by a selenide method, is flattened by sputter etching, whereby a Cu-In layer is laminated thereon and a defect is not generated in the interface between the Cu-In layer and the layer 4 which is formed by sulfurizing. |
