FERROELECTRIC THIN FILM COMPOSITION AND ITS MANUFACTURE

摘要

PURPOSE:To obtain a ferroelectric thin film having chemical formula of PbZrxTi1-xO3 in which crystals are arranged normal to the surface of a substrate, regardless of the kind of the substrate. CONSTITUTION:A structure of strong dielectric thin film 4 consists of two layers of a NaCl-type oxide thin film 2 and a perovskite-type oxide ferroelectric thin film 3, both of which are formed on a substrate 1. The NaCl-type oxide think film 2 is oriented to the surface (100) by plasma-exciting MO-CVD process which uses the vapor of organic metallic complex as raw material gas. The perovskite-type oxide ferroelectric think film 3 is oriented to the surface (001) by spattering process, and has chemical formula of PbZrxTi1-xO3 (0<=x<=1).