FORMATION OF RESIST PATTERN

摘要

PURPOSE:To enable the formation of fine resist patterns by preventing side etching. CONSTITUTION:After a resist layer 2 is formed on a substrate 1, the resist layer 2 is baked with patterns. The resist layer is then exposed to a silylating agent in order to silylate regions 5 baked in the resist layer 2. The resist layer is developed to the mid-point so as to allow undeveloped parts to remain after the silylation. The resist layer is subjected to the silylation of the parts exposed by development in the baked regions. The undeveloped parts are then removed and the resist patterns are obtd. in the final.