| 摘要 |
PURPOSE:To provide the manufacturing method, of a semiconductor substrate, wherein a film thickness can be controlled easily, an arbitrary film thickness can be obtained and a high semiconductor characteristic can be obtained. CONSTITUTION:A film formation substrate 1 whose influence of a silicon semiconductor film 2 is small and which is composed mainly of a low-melting-point metal whose melting point is lower than that of the film is used. A plasma flame-sprayed silicon semiconductor film 2 in an arbitrary film thickness is formed on the film-formation substrate 1; after that, the film-formation substrate 1 is heated and its temperature is raised up to the melting point of its constituent metal; the film-formation substrate 1 is melted; the plasma flame-sprayed silicon semiconductor film 2 is separated; after that, the low-melting-point metal which has adhered to and is left on the separation face of the plasma flame- sprayed silicon semiconductor film 2 is removed by a proper etching operation; a silicon semiconductor substrate 11 is obtained. |
