| 摘要 |
PURPOSE:To prevent the generation of a short-circuit between a transparent electrode film and a rear electrode film at photoelectric conversion regions and to manufacture a photovoltaic device of a high conversion factor at a high yield. CONSTITUTION:A laser beam LB1 is applied to one end part of an insulating paste 4 formed on a transparent electrode film 2b in such a way that it is provided side by side with a conductive paste 3 and one part of the paste 4 is removed to form a flat part B of a low height. After an a-Si layer 5 and a rear electrode film 6 are laminated and formed, laser beams LB2 and LB3 are applied to obtain the series-connection between adjacent photoelectric conversion regions 7a and 7b and at the same time, the layer 5 and the film 6 are respectively separated into two in each photoelectric conversion region. |
