| 摘要 |
PURPOSE:To provide a semiconductor device which is mounted so as to shorten the distance between a semiconductor chip electrode and a capacitor and reduces an impedance at a high frequency for a bias power source of a semiconductor chip required by a DC bias. CONSTITUTION:Capacitors 14a and 14b and a chip carrier 22 are loaded on a metal block 12 in such a fashion that they may be stacked. The electrodes on the bottom of the chip carrier 22 is bonded with top electrodes 18a and 18b of the capacitor 14a as stacked while they are connected to electrodes 28a and 28b on their top by way of penetration electrodes 30a and 30b which penetrate an insulation layer at the same time. A semiconductor photodetector chip 34, such as a twin type PIN photodiode is flip-chip-bonded with the electrodes 28a, 28b and 28c. |
