| 摘要 |
PURPOSE:To improve the throughput of the production of a semiconductor integrated circuit and to reduce the cost thereof by subjecting a photomask for projection made of quartz having the same outside diameter and thickness as the outside diameter and thickness of a wafer to direct plotting by using an electron beam exposing device. CONSTITUTION:Fine patterns can be exposed as they are and inexpensively and speedy to the substrate of a glass mask 2 if the shape, thickness and surface flatness of the glass mask 2 to be used including the tolerance thereof are set the same as the standard specifications specified to the wafer 1 by utilizing the electron beam exposing device which executes the direct plotting on the water 1. The glass mask 2 is formed to the same outside diameter (phiM), thickness (tM) and tolerance as the outside diameter (phiM), thickness (tM) and tolerance of the wafer 1. However there is no need for an orientation flat 3 which exists in the wafer 1. Namely, the glass mask 2 has the same outside diameter and thickness as the outside diameter and thickness of the wafer 1 and since the glass mask 2 is the photomask for projection made of the quartz, the procedures for producing the mask are shortened and the stages are curtailed. |
