发明名称 DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER FOR EXCITING FIBER AMPLIFIER
摘要 PURPOSE:To provide a high output power DFB laser of a high efficiency for EDFA pump by providing a variation in a waveguide structure having a phase shifting of one or a plurality of diffraction gratings or its equivalent effect on one side of the center of a resonator consisting of a waveguide, and setting reflectivities of both end faces to a special value or less. CONSTITUTION:A wafer has a composite waveguide structure of an active layer 5 and a waveguide layer 4, and so mesa-etched as to become a stripe. Further, a p-type InP layer 9, an n-type InP layer 10, an n-type InGaAsP layer 11 are formed on the side. Finally, a p-type electrode, and an n-type electrode 13 are formed. Both cleaved end faces are coated with SiNx film 14 to reduce the reflectivities of the end faces to 2% or less. When a forward current is applied to the element, a boundary between the layers 9 and 10 becomes a p-n reverse junction, and hence a current is injected only into the stripe 5. Light goes to and from in a composite waveguide structure (stripe) made of the layers 5, 4 while being fed back by a diffraction grating 2 to cause oscillation.
申请公布号 JPH05145194(A) 申请公布日期 1993.06.11
申请号 JP19910309188 申请日期 1991.11.25
申请人 TOSHIBA CORP 发明人 KINOSHITA JUNICHI
分类号 H01S3/08;H01S3/093;H01S3/094;H01S5/00;H01S5/042;H01S5/10 主分类号 H01S3/08
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