Pn Junction Type Group III Nitride Semiconductor Light-Emitting Device

摘要

A pn junction type Group III nitride semiconductor light-emitting device 10 ( 11 ) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and barrier layers 21 including Group III nitride semiconductors are alternately stacked periodically between an n-type clad layer 105 and a p-type clad layer 107 which are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layer 21 m of the light-emitting layer 2 is closest to and opposed to the n-type clad layer, and the other end layer 21 n of the light-emitting layer 2 is closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layer 21 n is thicker than the barrier layer of the one end layer.