| 摘要 |
PURPOSE: To provide an intermediate contact layer in a title vertical current semiconductor device, such as a reinforced insulating gate bipolar transistor. CONSTITUTION: An active wafer 11, used for the formation of a device active element, is wafer/bonded onto a conductor 16 on the surface of a substrate wafer 12. By this wafer/bonding step, not only an intermediate contact layer 16 is formed but also a series of P18 and N19 region are diffused in the active wafer 11, thereby enabling an ohmic contact to be formed between the P and N-regions 18, 19 and the intermediate contact layer 16. Furthermore, a substrate wafer 12 fills the role of a supporter for the active wafer 11 in the wafer- processing work.
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