| 摘要 |
An embedded ferroelectric RAM(random access memory) device is provided to reduce a chip size by decreasing the size of a multistage voltage amplifier. A semiconductor substrate(200) is divided into an analog block, a digital block and a memory block. A Schottky diode is formed in the analog block, composed of a semiconductor substrate including an isolation layer, a first via(271) and a first metal interconnection. A second via(272) is formed on the Schottky diode. A second metal interconnection comes in contact with the second via. A third via(273) is formed on the second metal interconnection. A third metal interconnection comes in contact with the third via. A lower electrode contact(250) is formed on the third metal interconnection. A ferroelectric capacitor is formed on the lower electrode contact. The ferroelectric capacitor is composed of a lower electrode(210), a ferroelectric layer(220) and an upper electrode(230).
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