| 摘要 |
<p>A power FET composed of a substrate having upper and lower surfaces and having at least one body region (2) of a first conductivity type which extends to said upper surface (4); and at least one base region (6) extending into the substrate from the upper surface, the base region being of a second conductivity type and having at least two portions between which the at least one body region extends, and an insulated gate (20) disposed at the upper surface above the body region, the substrate further has a shielding region (30) of the second conductivity type extending into the least one body region from the upper surface, at a location below the gate electrode and enclosed by the base region portions, and spaced from the base region by parts of the body region of the first conductivity type.</p> |
